| 000 | 00753nam a2200241 4500 | ||
|---|---|---|---|
| 001 | 22081 | ||
| 010 |
_a0-387-56540-X _bencadernado _dEsc 14 500$ |
||
| 090 | _a22081 | ||
| 100 | _a19971229d1993 k||y0pory50 ba | ||
| 101 | _aeng | ||
| 102 | _aUS | ||
| 200 |
_aGas source molecular beam epitaxy _egrowth and properties of phosphorous containing III-IV heterostructures _fM. B. Panish, H. Temkin |
||
| 210 |
_aNew York _cSpringer-Verlag _dcop. 1993 |
||
| 215 |
_aXIV, 428 p. _cil. _d24 cm |
||
| 225 | _aSpringer series in materials science | ||
| 606 | _aEpitaxia por feixes moleculares | ||
| 680 | _aQC611.6 | ||
| 700 |
_aPanish _bM. B. |
||
| 701 |
_aTemkin _bH. _4070 _930589 |
||
| 801 |
_gRPC _aPT |
||
| 942 |
_2lcc _cA _n0 |
||