000 -Record Label |
fixed length control field |
03038cam a2200277Ia 4500 |
005 - Identificador da versão |
control field |
20201020101414.0 |
010 ## - ISBN - International Standard Book Number |
Número (ISBN) |
9780080445021 |
Modalidade de aquisição e/ou preço |
compra |
100 ## - Entrada principal |
Dados gerais de processamento |
20150410d2005 k||y0pory50 ba |
101 0# - Língua do documento |
Língua do texto, banda sonora, etc. |
eng |
102 ## - País da publicação |
País de publicação |
US - United States of America |
200 1# - Título |
Título próprio |
Dilute nitride semiconductors |
Indicação geral da natureza do documento |
Documento electrónico |
Primeira menção de responsabilidade |
M. Henini |
210 ## - Local de edição |
Lugar da edição, distribuição, etc. |
Amsterdam |
-- |
London |
Nome do editor, distribuidor, etc. |
Elsevier |
Data da publicação, distribuição, etc. |
2005 |
215 ## - Descrição física (Vol.pg.fl.tm.fsc) |
Descrição física |
xvii, 630 p. |
300 ## - Notas gerais |
Texto da nota |
Colocação: Online |
303 ## - Notas Informação descritiva |
Texto da nota |
* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 {aelig}m and 1.55 {aelig}m are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. |
606 ## - Nome comum como assunto |
Koha Internal code |
50142 |
Elemento de entrada |
Semicondutores |
Subdivisão de assunto |
Materiais |
680 ## - Classificação Biblioteca Congresso |
Notação |
TK7871.15 |
700 ## - Autor (resp. principal) |
Palavra de ordem |
Henini |
Outra parte do nome |
Mohamed |
Koha Internal Code |
50143 |
801 #0 - Fonte de origem |
País |
Portugal |
Regras de catalogação |
RPC |
856 4# - URL Endereço WEB |
URL |
http://www.sciencedirect.com/science/book/9780080445021 |
942 ## - Elementos de entrada adicionados (Koha) |
Fonte da classificação ou esquema de estante |
|
Tipo de item no Koha |
E-Books |
Suprimido |
0 |